High Output Power Low Noise Amplifier Chains at 100 GHz

F. Maiwald,R. Lin, R. Dengler, S. Smith,J. C. Pearson,I. Mehdi,T. Gaier, J. Crowley

msra(2008)

Cited 23|Views3
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Abstract
Low noise amplifier (LNA) chains at 100GHz were constructed to be used as highly sensitive detectors in the development of the Haystack Ultra-wideband Satellite Imaging Radar (HUSIR). Three separately packaged MMICs are combined to provide a highly sensitive millimeter-wave detector. The LNA chip is a 0.1 micron InP based chip [1]. This is followed by 0.1 micron GaAs based driver and power amplifier MMICs [2]. This combination provides more than 50dB of gain over a frequency range of 90 to 100GHz with 50K noise temperature when measured at 20K ambient temperature. This chain provides enhanced functionality for the Haystack Ultra-wideband Satellite Imaging Radar (HUSIR). Index Terms — ground based radar, high gain amplifier, direct detector, millimeter waves, InP HEMT LNA, high power GaAs MMICs.
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Key words
direct detector,high gain amplifier,high power gaas mmics.,millimeter waves,inp hemt lna,index terms — ground based radar,ambient temperature,millimeter wave,ultra wideband,indexing terms,chip,low noise amplifier,power amplifier
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