Observation of Micro-Oxygen Precipitates in the Vicinity of the Oxidation-Induced Stacking Fault Ring and Their Effects on Thin Gate Oxide Breakdown

Micro-oxygen precipitate, and their effects on thin gate oxide breakdown have been investigated using a crystal-originated-particle (COP)free, wafer and a low COP deafer. After two-step annealing and subsequent repolishing, regions, containing micro-oxygen precipitates were observed inside and outside the oxidation-induced,tackitio fault (OSF) ring. Delta Oil and near-surface microdefects (NSMDs) in those regions showed a reverse trend. It appears that micro-oxygen precipitates Show a different precipitation behavior from the anomalous oxygen precipitation (AOP) behavior in the conventional Czochralski (CZ) silicon wafer Both the OSF ring. The oxide breakdown electrical field was degraded in almost file same region as that where micro-oxygen precipitates ere repealed. This indicates that micro-oxygen precipitates can affect the degradation of gate oxide integrity (GOI).