Output Characteristics of a Dual-Wavelength Semiconductor Laser Beam in Master-Oscillator Power-Amplifier Configuration

Two single-frequency laser beams at 852 nm were injected into a semiconductor tapered amplifier to generate a dual-wavelength laser beam. When the frequency difference 8 between the two injection beams was less than similar to 2GHz, several sidebands appeared in the output due to the beating of the two injection frequencies. The efficiency of sideband generation was measured as a function of injection power. The total output power was measured as a function of delta. We showed that the loss of the total output power, which is always accompanied by sideband generation, is one of the noteworthy characteristics of the dual-wavelength beam in a master-oscillator power-amplifier configuration.