The effect of hydrogen on switching properties of ferroelectric PZT thin films

To investigate the hydrogen-enhanced degradation of the ferroelectric PZT capacitor, the switching current produced by the reversal of domains in ferroelectric PZT thin film memories is analyzed as a function of H-2 gas annealing time using the Avrami theory. The switching time is and the switchable polarization of the PZT films decrease with H-2 gas annealing. The H-2 gas annealing increase the concentration of defects, such as an oxygen vacancy, a lead vacancy, and a OH- ions, on the surface of PZT film or inside PZT film. These defects lead to reduce the switching time t(S) and to increase the activation field alpha. The polarization of ferroelectric PZT film is reduced and pinned by OH- bond during the H-2 gas annealing.