Beamtests of the N-on-n Silicon Microstrip Detector with Various P-stop Structures

A Silicon microstrip detector with n-strip readout on the n- bulk Silicon has been fabricated by implementing 4 different p- stop structures in 6 zones in the detector's n-side. The detectors were assembled into the units of detector-electronics modules. The response difference in the p-stop structures and effect of de- tector strip length were characterized in the laboratory and un- der the beamtests with charged pions.