Beam Tests Of A Double-Sided Silicon Strip Detector With Fast Binary Readout Electronics Before And After Proton-Irradiation

Y Unno, M Takahata, H Maeohmichi, F Hinode,T Akagi, T Aso, M Daigo,J Dewitt, D Dorfan,T Dubbs, M Frautschi,A Grillo,C Haber,T Handa, T Hatakenaka,B Hubbard, H Iwasaki,Y Iwata,D Kaplan, S Kashigin, I Kipnis,S Kobayashi, T Kohriki,T Kondo, W Kroeger, J Matthews,H Miyata,A Murakami, K Noble,K Oshaughnessy,T Ohmoto,T Ohsugi,H Ohyama,T Pulliam,J Rahn,Wa Rowe,Hfw Sadrozinski, A Seiden, J Siegrist, E Spencer, H Spieler, R Takashima,N Tamura, S Terada, M Tezuka,A Webster, R Wichman, M Wilder, M Yoshikawa

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（1996）

引用 11|浏览31

暂无评分

摘要

A double-sided silicon strip detector with a radiation-tolerant design was fabricated and characterized in a sequence of beam tests at KEK using 4 GeV/c pions. The detectors were combined with newly designed, fast, lower power, bipolar amplifier-shaper-discriminator chips and CMOS digital pipeline chips to record hit-no hit signals in the strips. Efficiencies, noise occupancies, and spatial resolutions were measured before and after the proton irradiation at an equivalent fluence of 1 x 10(14) p/cm(2), depending on angle of track incidence and strip-pitches. The median pulse height distribution, derived from the threshold scans of the efficiency, allowed to extract the response of the detector. A 1T magnetic field enabled us to determine the Hall mobilities of electrons and holes.

查看译文

关键词

fast binary readout electronics,silicon,double-sided,proton-irradiation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要