Submicrometre gate length scaling of inversion channel heterojunction field effect transistor

P. A. Kiely,T. A. Vang,Micovic, M., Lepore, A.,G. W. Taylor,R. Malik,D. P. Docter,P. A. Evaldsson,P. R. Claisse,K. F. Brown-Goebeler,F. Storz

Electronics Letters （1994）

Cited 7|Views11

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Abstract

The scaling to 0.5 μm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm=205 mS/mm and VTH=-0.34 V have been obtained for 0.5×100 μm2 devices. For shorter gate lengths, threshold shifts are sizeable so that in order to scale further, modifications to the growth and processing are required

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Key words

III-V semiconductors,gallium arsenide,high electron mobility transistors,indium compounds,integrated optoelectronics,solid-state microwave devices,0.5 micron,205 mS/mm,40 GHz,HFET,InGaAs,heterojunction field effect transistor,inversion channel,single strained InGaAs quantum well,submicron gate length scaling

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