The deposition of aluminum thin films by CVD using a novel adduct of dimethylaluminum hydride

Communication: Thin films of aluminum have an important application in the metallization of silicon devices in very large scale integration technology. In this communication a new precursor, NMe(2)AlH(Nme(2)Et), has been used for the CVD of high purity aluminum in the temperature range 250-350 degrees C. In contrast to currently available precursors it is a free flowing and non-pyrophoric liquid, making it less hazardous and more convenient for use in CVD.