Structure Changes in InP and GaAs Crystals Double Irradiated with Electrons and Swift Heavy Ions

InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.