The response of silicon position sensitive detectors to heavy ions
Nuclear Instruments and Methods in Physics Research（1983）
摘要
The pulse height response characteristics of surface barrier and ion implanted position sensitive detectors have been measured. Surface barrier detectors with junctions formed using oxidation by potassium dichromate exhibit small heavy ion pulse height defects indicating thin entrance windows. Ion implanted detectors give considerably larger defects because of penetrating tails in the distribution of implanted ions and electrically active defects.
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关键词
sensitive detectors,heavy ions,silicon position
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