A 12-W GaAs Read-Diode Amplifier at X Band

Hua Quen Tserng,D. J. Coleman,F. H. Doerbeck,Don W. Shaw,W. R. Wisseman

Microwave Theory and Techniques, IEEE Transactions （1978）

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摘要

Multiple-mesa GaAs Read diodes have been incorporated in a single-stage microstrip amplifier module at X band. Stable CW amplification with an output power of 12 W at 4-dB gain and 23.5-percent power-added efficiency has been demonstrated. Design considerations for the amplifier circuits along with the microwave performance results are presented.

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关键词

power added efficiency,gallium arsenide,schottky diodes,power generation,oscillators,microstrip,impedance,frequency

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