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Sb掺杂ZnO纳米材料的研究进展

Yong-yan YAN,Yong MA,Shao-ping ZHU

Journal of Chongqing University of Science and Technology(Natural Sciences Edition)（2009）

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Abstract
ZnO纳米材料是一种新型的直接带隙半导体材料,其禁带宽度为3.37eV.Sb掺杂ZnO纳米材料在光电、气敏效应、p型导电等方面具有优良的性质.介绍Sb掺杂ZnO纳米材料在这几方面的最新研究进展.
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Sb-doped,p-type ZnO,ZnO films
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