Electronic Structure Of The Single-Domain Si(111)-(3x1)-Li Surface

PHYSICAL REVIEW B(2003)

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摘要
The band structure of the single-domain Si(111)-(3x1)-Li surface is investigated by angular resolved photoelectron spectroscopy (ARPES) with synchrotron radiation. Vicinal surfaces are used as templates for obtaining a single-domain (3x1) reconstruction. The surface band structure consists of a single, well-pronounced state at about 0.9 eV below the valence band maximum. Its dispersion matches local density calculations for the honeycomb-chain-channel (HCC) structure, but the calculated energy is 0.31 eV too high. This shift is reminiscent of localized surface states on other silicon surfaces, such as Si(111)-H.
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关键词
valence band,synchrotron radiation,photoelectron spectroscopy,electronic structure,electron density,single domain,band structure
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