Characterization of two deep-diffusion avalanche photodiode array prototypes with different optical coatings

Tae Yong Song,J.-B. Mosset,J.-F. Loude,Yong Choi,C. Morel

Nuclear Science, IEEE Transactions（2004）

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摘要

The aim of this paper was to characterize two deep-diffusion avalanche photodiode (APD) arrays for positron emission tomography (PET). Two different prototypes developed by radiation monitoring devices (RMD) were investigated. Quantum efficiency was determined as a function of wavelength in the visible-ultraviolet rays region. Capacitance was determined as a function of bias. Dark current and gain were measured at several fixed temperatures versus bias. Finally, bulk and surface contributions to the dark current were estimated.

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关键词

semiconductor counters,photocapacitance,deep-diffusion avalanche photodiode array prototypes,capacitance,avalanche photodiodes,bulk contribution,surface contributions,PET,antireflection coatings,dark current,radiation monitoring devices,positron emission tomography,quantum efficiency,Avalanche photodiodes,wavelength,fixed temperatures versus bias,radiation monitoring,visible-ultraviolet rays region,semiconductor radiation detectors,optical coatings

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