Silicon Nitride Surface Preparation to Prevent Photoresist Blister Defects
msra
Abstract
Preparation of silicon nitride (SiN) surface prior to photoresist coating is primarily performed to improve the resist adhesion to SiN and/or to clean the SiN surface. Common industry practices include using oxygen plasma clean or priming the SiN surface with Hexamethyldisilazane (HMDS). The state of the SiN surface has been observed to be a factor in the formation of blisters in the photoresist (PR) following exposure with ultra-violet (UV) light. The PR blister defects may impact visual yield by as much as 30%. Hydrogen plasma and methane plasma were found to be the most effective SiN surface treatments to prevent the formation of PR blister defects. In this paper, the theory for the formation of the PR blister defect will be presented. Alternative SiN surface preparation methods to prevent blister defects will also be discussed. INTROUCTION
MoreTranslated text
Key words
silicon nitride,hmds,blister,oxygen descum,adhesion,photoresist defect,process yield,hydrogen plasma
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined