The Effect of the H₂Flow Rate on the Deposition of TiO₂Film Produced by Inductively Coupled Plasma-Assisted CVD

Titanium dioxide (TiO2) films are produced by inductively coupled plasma-assisted (ICP) CVD at various H-2 flow rates. Anatase and rutile TiO2, films are obtained without any external heating. The surface morphologies, structures, and deposition rates of the TiO2 films are strongly affected by the H-2 flow rate. By plasma diagnostics, using a single Langmuir probe (SLP) and optical emission spectroscopy (OES), it is found that the amount of H-2 plays a dominant role in determining the deposition rate of the TiO2 films, while the substrate temperature or plasma density do not appreciably affect the deposition rate.