Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure
MRS Online Proceedings Library(2011)
摘要
Intrinsic hydrogenated amorphous silicon films were deposited by the DC saddle field system on crystalline silicon wafers. The transport parameters of the amorphous-crystalline silicon heterostructures were evaluated by Photocarrier Radiometric (PCR) lifetime measurements. We present the influence of surface pre-treatments on the interface passivation and determine that the standard wafer cleaning treatment SPM/SC1/SC2 yields the highest effective lifetime.
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关键词
silicon,amorphous-crystalline
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