Closed-loop control of growth of semiconductor materials and structures by spectroellipsometry
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A(1992)
摘要
Using closed-loop ellipsometric feedback control, we have grown a variety of epitaxial AlxGa1-xAs structures by chemical beam epitaxy where compositions x vary continuously with thickness according to a given input function. Present limits are exemplified by a 200 angstrom parabolic quantum well structure grown using compositions determined from the outermost running approximately 3 angstrom (approximately 1 monolayer) of depositing material.
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关键词
closed loop control
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