Germanium Antimonide Phase-Change Nanowires for Memory Applications

Xuhui Sun,Bin Yu,Garrick Ng,M. Meyyappan,Sanghyun Ju,David B. Janes

Electron Devices, IEEE Transactions（2008）

引用 30|浏览10

暂无评分

摘要

GeSb nanowires (NWs) have been grown using a vapor-liquid-solid approach for the fabrication of electrically operated phase-change random access memory device. The NWs are 40-100 nm in diameter and have approximately 90% Sb for fast crystallization. Memory devices show an on/off resistance ratio of 104, reset programming current of 0.7 mA, and set programming current of 60 nA.

查看译文

关键词

pram,set programming current,phase change memory,phase-change random access memory device,amorphous semiconductors,phase change materials,random-access storage,flash memory,chalcogenide,nanowires,gesb,nanowire,semiconductor quantum wires,phase change material (pcm),germanium antimonide phase-change nanowire,germanium compounds,on-off resistance ratio,vapor-liquid-solid growth method,semiconductor storage,random access memory (ram),crystallization,nanostructures,phase change

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要