STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (757)B substrates
JOURNAL OF CRYSTAL GROWTH(2005)
摘要
InGaAs and GaAs layers and GaAs/AlAs superlattice (SL) structures were grown by MBE on (757)B GaAs substrates and their corrugated growth fronts induced by the step bunching process were closely investigated by scanning transmission electron microscope (STEM). Cross-sectional images obtained from the [101] direction have revealed asymmetries and other features of strongly corrugated InGaAs layers and a smoothing process in GaAs/AlAs SL layers. (c) 2005 Elsevier B.V. All rights reserved.
更多查看译文
关键词
diffusion,growth,step-bunching,MBE,nanomaterials
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要