Ba0.60sr0.40tio3 Thin Films For Microwave Phase Shifter Devices: The Influence Of Crystallization Temperature On The Electric Field Dependent Phase Shift Response

We present the correlation between film fabrication conditions (crystallization temperatures), microstructure, and dielectric phase shift of Ba1-xSrxTiO3 (BST) thin films synthesized by metal organic solution deposition (MOSD) on sapphire substrates. The structure, microstructure, surface morphology, and composition of the films were assessed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), and Rutherford backscattering spectroscopy (RBS). The dielectric phase shift measurements were carried out using coplanar waveguide (CPW) test circuits over a frequency range of 2-18 GHz. Our results indicate that BST processed at 950 degrees C achieved large relative phase shift response with low attenuation of the microwave signal.