Growth Of Thin Mn Films On Si(111)-7x7 And Si(111)-Root 3x Root 3 : Bi

The growth process of Mn on two different reconstructions of the Si(111) surface is studied using reflection high-energy electron diffraction, low-energy electron diffraction with spot-profile analysis, scanning tunneling microscopy, and Auger-electron spectroscopy. Mn growth on both substrates-either by evaporation onto a substrate at room temperature with subsequent annealing or onto a substrate at elevated temperatures-leads to the formation of similarly structured epitaxial films with an extra layer of Si on top. Two growth models can be developed for the late stage of film growth on both substrates: Mn either grows in its gamma phase or Mn forms MnSi. In contrast, differences are found in the beginning of the growth process, dependent on the underlying surface reconstruction.