Acceptor state formation in arsenic‐doped ZnO films grown using ozone

The optical and transport properties of As-doped ZnO films are examined. The films are grown by pulsed-laser deposition using As2O3 as the source of As and O-3/O-2 as the oxidant. The films are epitaxial, single phase, and oriented in the ZnO [002] direction. Low temperature photoluminescence spectra at 20 K show for the formation of acceptor states associated with the As, although Hall measurements indicate that the films doped with 0.2 at% As are n-type. From the photoluminescence spectra, the binding energy of the As-related acceptor was estimated to be 155 meV. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.