Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In$_{0.08}$ Ga$_{0.92}$ N Shallow Step

Cheng-Huang Kuo,Y. K. Fu,C. L Yeh,C. J. Tun,P. H. Chen,Wei-Chih Lai,Shoou-Jinn Chang

IEEE Photonics Technology Letters（2009）

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Abstract

A nitride-based asymmetric two-step light-emitting diode (LED) with In0.08 Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08 Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting...

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Key words

Light emitting diodes,Indium,Gallium nitride,Optical sensors,Radiative recombination,Optical pumping,Semiconductor diodes,Power generation,Aluminum gallium nitride,Semiconductor materials

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