High-Temperature Stability of Lasing Wavelength in GaAsSb/GaAs QW Lasers
IEEE Electron Device Letters（2009）
Abstract
In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525degC). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature...
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Key words
Laser stability,Gallium arsenide,Educational institutions,Surface emitting lasers,Cities and towns,Resonance,Temperature dependence,Microelectronics,Threshold current,Epitaxial growth
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