eDRAM的低功耗自适应动态刷新及写电压调整方案
Journal of Fudan University(Natural Science)（2012）
Abstract
由两个PMOS晶体管组成的增益单元构成的eDRAM核心存储单元,与逻辑工艺完全兼容且面积仅为SRAM的40%.在不增加单元面积的前提下对传统增益单元的阈值电压及版图结构进行了改进,获得了平均2～3倍的数据保持时间的提升.引入了监测单元方案,使得芯片在温度变化和存取操作干扰变化的情况下能自适应地调整刷新频率及写操作电压,节约了25%～30%的刷新功耗.
MoreTranslated text
Key words
low power,write voltage adjustment,adaptive dynamic refresh,gain cell,embedded DRAM
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined