Sram Read Current Variability And Its Dependence On Transistor Statistics

Sriramkumar Venugopalan,Vivek Joshi,Luis Zamudio,Matthias Goldbach, Gert Burbach,Ralf Vanbentum,Sriram Balasubramanian

2013 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC)（2013）

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摘要

Our study breaks down the dependence of SRAM read current (I-read) variability (sigma I-read) into constituting pass-gate (PG) and pull down (PD) NMOS transistor variability. We report a bottoms-up model for sigma I-read including feedback in stacked transistors and discuss its implications on SRAM performance.

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关键词

MOSFET circuits,SRAM chips,SRAM performance,SRAM read current variability,bottoms-up model,pass-gate NMOS transistor variability,pull down NMOS transistor variability,stacked transistors,transistor statistics,

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