Blue Gan-Based Vertical Cavity Surface Emitting Lasers By Cw Current Injection At 77k
GALLIUM NITRIDE MATERIALS AND DEVICES IV(2009)
摘要
In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7 degrees and 80 %, respectively. A larger spontaneous coupling efficiency of about 7.5x10(-2) was also measured.
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关键词
GaN,VCSEL,DBR,electrical pumping
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