Selected area growth of II–VI nanostructures using shadow masks
PHYSICA STATUS SOLIDI B-BASIC RESEARCH(2004)
Abstract
We investigate molecular beam epitaxy of II-VI materials through GaAs/AlGaAs epitaxial shadow masks on GaAs(001) substrate. Scanning electron and atomic force microscopy are employed to investigate the effects of surface diffusion, faceting, partial shadow (minimized in the experimental set-up), and material deposition on the mask (closing of apertures) on the selected area growth of ZnSe and CdSe. The results illustrate that selected area growth of II-VI nanostructures is controlled by the growth geometry. In contrast to the case of III-V materials, we found no macroscopic features (>10 nm) which could be attributed to surface diffusion. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Key words
atomic force microscopy,molecular beam epitaxy,surface diffusion
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