TRANSPORT SYSTEM FOR ION IMPLANTATION

ITEP in collaboration with MEPHI and HCEI (Tomsk) develops the high intensity ion beam generation and transport systems for low energy (1 - 50 keV) ion implantation. Such facilities are used for semiconductor technology. The Bernas type ion source is used for the ribbon ion beam production. The periodical system of electrostatic lenses (electrostatic undulator) was proposed for ribbon beam transport line. The design of transport system and the results of the beam dynamics investigation are presented. The influence of the electrodes construction errors on the beam dynamics is discussed.