MOCVD生长AlGaInP/InGaAsP大功率808nm无铝量子阱激光器
Semiconductor Technology（2008）
Abstract
设计制作非对称宽波导结构无铝量子阱激光器,可降低内部损耗,实现低阈值电流、高转换效率的目的,同时也增加了最大输出功率。采用金属有机气相化学沉积(MOCVD)进行外延生长,制作了100μm条宽,1500μm腔长的808nm激光器器件,镀膜后阈值电流230.5mA,斜率效率1.31W/A。连续电流条件下,得到最大输出功率超过8W,并且计算得到内吸收系数为1.7cm-1。
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Key words
metal organic chemical vapor deposition(MOCVD),asymmetric broad-waveguide structure,quantum well laser diode
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