Tail-state distribution and extended-state mobility in a-Si:H

Analyses of drift mobilities in a-Si:H have been carried out for a number of model density of states distributions by means of an algebraic discretization formalism for multiple trapping transport. The extended state mobility υo is found to be not larger than 50 cm 2 V −1 s −1 . None of the distributions proposed so far in the literature give satisfactory agreement with experimental data.