Fermi Level Pinning at n-GaAs(110) Electrodes

Valentina Lazarescu,Mariuca Gartner,Rares Scurtu,Mihai Anastasescu,Adrian Ghita,Mihail F. Lazarescu,Wolfgang Schmickler

Passivation of Metals and Semiconductors, and Properties of Thin Oxide Layers（2006）

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摘要

Mott-Schottky plots and potential-dependent second harmonic generation measurements performed at n-GaAs(110) electrodes in 1 N H2SO4 revealed the Fermi level pinnig near midgap. The possible nature of the bandgap states is discussed on the basis of the information provided by electrochemical impedance spectroscopy and in situ spectroscopic ellipsometry studies

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electrodes,n-gaas

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