Compatibility of p-metal oxide semiconductor technology with the epitaxial YBa₂Cu₃O₇   growth on Si

The objective of our work is to achieve the fabrication of fully Integrated monolithic semiconducting preamplifier/superconducting YBa2Cu3O7-delta (YBCO) microbolometers in order to enhance overall sensor performance. To our knowledge this paper reports the first cofabrication of a c-axis-oriented YBCO film with a critical temperature of 86 K and an active semiconducting device on the same silicon substrate. We proposed a process fabrication where the p-MOS field effect transistors (p-MOSFET) with a Pt-based metallization are fabricated first and the YBCO and buffer layers are deposited as the final step. After YBCO deposition the Pt-based multilayers present interconnect sheet resistivity of 0.45 Omega per square and specific contact resistivity of 2 x 10(-4) Omega cm(2). The drain current versus gate voltage (V-gs) and versus drain-source voltage (V-ds) characteristics of a 30 It m wide 10 mum long transistor are finally given. It presents a transconductance g(m) = 8.7 x 10(-5) A V-1 (at V-ds = 10 V and V-gs = -20 V) and a threshold voltage V-t = -6.53 V at 300 K.