Multiscale Modeling And Simulation Of Silicon Carbide Oxidation

The objective of this theoretical work is to understand the process of thermal oxidation of SiC and investigate the phenomenon of transition layer generation at the SiC/SiO2 interface. We have identified the reaction process to be the rate-limiting step of SiC oxidation. The dependence of transition layer on temperature and SiC crystal plane orientation has been studied. The difference in the oxidation rates of Si face and C face of SiC has been explained using the proposed multiscale approach. The computed concentration of carbon cluster at the interface indicates the presence of interface traps due to incomplete oxidation of SiC. The mathematical models and simulation results have been validated with experimental correlations. The proposed model is valid within typical temperature conditions of dry oxidation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim