New generation of Self Ionized Plasma copper seed for sub 40nm nodes

J. Guillan,K. Haxaire,S. Chhun,E. Richard,M. C. Luche,L. Arnaud,E. Petitprez,C. Monget,D. Galpin,P. Normandon

Microelectronic Engineering（2011）

引用 3|浏览47

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摘要

Two seed deposition hardware are compared in this paper: a standard Self Ionized Plasma (SIP) standard chamber and a new generation chamber allowing Cu deposition and re-sputtering simultaneously. TEM characterizations exhibits better features coverage for new seed generation thank to process fine tuning. It induces defectivity improvement and void density is reduced with new hardware. Furthermore, reliability performances are improved without degrading parametrical results.

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关键词

better features coverage,new generation chamber,cu seed deposition,metal void,cu deposition,tem characterization,electromigration,new seed generation,self ionized plasma copper,standard chamber,new hardware,seed deposition hardware,defectivity improvement,standard self ionized plasma,step coverage,re-sputtering,copper

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