Carrier Concentration In Selectively Doped N-Algaas Gaas Single Heterojunctions

Carrier concentration of a two dimensional electron gas, n s in n-AlGaAs/GaAs heterostructures is measured with varying the spacer layer thickness. Structures are designed to eliminate the effects of the charges at the surface and interface on n s . Thus obtained n s is shown to be in good agreement with calculation in which 65% of the band gap difference between AlGaAs and GaAs is assumed to appear in the conduction band.