A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface

ISSCC（2010）

引用 28|浏览45

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摘要

We present a 159 mm2 32 Gb MLC NAND Flash that is capable of 200 MB/S read and 12 MB/S write throughputs in 32 nm technology. This performance is achieved by using DDR interface and by using new core memory and data path architecture as well as program algorithm.

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关键词

NAND circuits,asynchronous DDR interface,nanotechnology,program algorithm,core memory,double data rate,size 32 nm,asynchronous circuits,storage capacity 32 Gbit,MLC NAND flash memory,data path architecture,flash memories

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