Cathodoluminescence and electron field emission of boron-doped a-C:N films

Carbon(2005)

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摘要
The optical and electrical properties of so-called carbon nitride films (a-C:N) and boron doped so-called carbon nitride films (a-C:N:B) are studied with cathodoluminescence (CL) spectroscopy and electron field emission measurement. The a-C:N films were first deposited on Si by a filtered cathodic arc plasma system, and then boron ions (∼1×1016cm−2) were implanted into the a-C:N films to form a-C:N:B films by a medium current implanter. The structural and morphological properties of a-C:N and a-C:N:B films were then analyzed using secondary ion mass spectrometer, X-ray photoelectron spectroscopy, FT-IR spectra, Raman spectroscopy and atomic force microscopy. The a-C:N film exhibits luminescence of blue light (∼2.67eV) and red light (∼1.91eV), and the a-C:N:B film displays luminescence of blue light (∼2.67eV) in CL spectra measured at 300K. Furthermore, the incorporated boron atoms change the electron field emission property, which shows a higher turn on field for the a-C:N:B film (3.6V/μm) than that for the a-C:N film (2.8V/μm).
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关键词
C. Atomic force microscopy,D. Luminescence, Electrical properties, Optical properties, Field emission
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