Design and simulation numerically with performance enhancement of extremely efficient Sb2Se3-Based solar cell with V2O5 as the hole transport layer, using SCAPS-1D simulation program

Md. Forhad Hossain,Avijit Ghosh, Mohd Abdullah Al Mamun, Asif Ahammad Miazee,Hamad Al-lohedan,R. Jothi Ramalingam, Mohammad Fokhrul Islam Buian, Syed Riazul Islam Karim, Md. Yousup Ali, M. Sundararajan

OPTICS COMMUNICATIONS(2024)

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摘要
Antimony Tri-selenide (Sb2Se3), a readily available, non-toxic chemical has the capability to be utilized as a solar cell substance. In the current work, basic equations such Poisson's, drift -diffusion, and carrier continuity are used to quantitatively study Sb2Se3 solar cells using the Solar Cell Capacitance Simulator (SCAPS-1D) program. The key intent of this project is to enhance the performance of the recently recommended Al/FTO/SnS2/Sb2Se3/ V2O5/Ni research on the effects belonging to the SC's V2O5 BSF and SnS2 buffer layer upon the performance indicators of open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE). To improve the achievement, performance parameters including thickness variation, carrier concentration, the concentration of bulk defects in every segment, interface defects, capacitance -voltage, functional temperature, surface recombination velocity, and back and front electrodes have been studied. Comprehensive simulations and analyses are performed to determine the Sb2Se3 absorber layer impact on the band gap, thickness, energy level, defect density, and the concentration of carrier reliability of the equipment. According to the findings, good device performance is ensured by the Sb2Se3 layer having the following properties: an optimal Sb2Se3 absorber thickness of 800, an ultimate band gap of 1.2 eV, an absorber defect density of less than 1015 cm- 3, a level of energy 0.1 eV (higher than the valence band), and the concentration of charge carrier is 1014 cm3. After varying factors are optimized, the highest PCE of 34.11% can be achieved. This was accompanied by a VOC of 0.9907 V, a notable JSC of 39.181707 mAcm ? 2, and a formidable FF of 87.88%. The results of the simulation provide helpful information and recommendations for planning and engineering Sb2Se3 solar cells.
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关键词
Sb2Se3 absorber,Electron transport layer ETL,Photovoltaic,SnS2,Hole transport layer HTL,Efficiency
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