快速热压法制备掺杂纳米SiC的MgB_2超导体
Journal of Northeastern University(Natural Science)（2009）
Abstract
采用快速热压烧结技术,在流动的高纯氩气保护氛围下,成功地制备出致密MgB2块材.系统地介绍了快速热压技术烧结MgB2块材的工艺,找出了烧结温度、保温时间、原料配比等最佳工艺参数;讨论了SiC纳米相的掺杂对MgB2块体的影响,包括微观显微组织、物相分析、临界电流密度(Jc)等.实验表明,在快速热压条件下,950℃保温30min,随后炉冷,可以制备出理想的MgB2块材,质量分数为5%SiC的掺杂可以极大地提高MgB2的超导性能.测试温度在20K以下,在自场下Jc可达到106A/cm2以上;在5K下,当外加磁场增加到7T时,Jc缓慢下降,但仍在105A/cm2以上,使其实用性得到更进一步改善.
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Key words
superconductor,SiC dopant,rapid hot pressing,magnesium diboride
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