Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry

The annealing time-dependent diffusion behavior of oxidized Au/Ni/p-GaN ohmic contact was studied with Rutherford backscattering spectroscopy/Channeling (RBS/C). It was found that, at 500 degrees C, 1 min annealing caused obvious indiffusion of Au, O and outdiffusion of Ni. And the Au even has diffused to the p-GaN/metal interface. According to the annealing time-dependent RBS spectra and referring to the correspondent specific contact resistance of the samples, it is suggested that indiffusion of Au and formation of NiO at the interface are among the critical mechanisms for the formation of low resistance ohmic contact with Au/Ni/p-GaN contact structure. (c) 2006 Elsevier B.V. All rights reserved.