Effect of Pits in InGaN/GaN Multi-Quantum Wells on the Strain and In Composition Segregation

Z. J. Yang,Y. Z. Tong,G. Y. Zhang,X. L. Du, N. Fujii,A. W. Jia, A. Yoshikawa

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH（2000）

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摘要

Two different kinds of pits in InGaN/GaN MQWs were observed. They are generated by In atoms in the InGaN quantum well layers migrating in opposite directions, which may imply different mechanisms for the pit formation.

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关键词

ingan/gan,ingan/gan,strain,multi-quantum

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