S波段低温低噪声放大器技术研究
Cryogenics & Superconductivity（2011）
Abstract
介绍了低温低噪声放大器使用的HEMT(高迁移率晶体管)器件噪声模型的建立,对HEMT用S参数和噪声参数进行仿真,获取适合的模型。给出了实例,放大器在低温10K工作,增益≥30dB,噪声温度≤4K。
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Key words
High electron mobilitytransistor(HEMT),Low noise amplifier(LNA),Cryogenic
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