Microscopical studies at cadmium impurities in compound semiconductors

A Baurichter,M Deicher,S Deubler,Doris Forkel,J Meier,H C Wolf,W Witthuhn, Isolde Collaboratione

APPLIED SURFACE SCIENCE（1991）

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摘要

Molecule-like defect complexes have been studied at Cd acceptors in the III-V semiconductors GaAs, GaP, InP, InAs, and InSb by PAC spectroscopy. After hydrogen plasma treatment, the formation of Cd-H complexes was observed in all these compounds. Additionally, the formation and stability of Cd-S and Cd-Se pairs in GaAs have been analyzed.

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