Electrical and Magnetic Properties of a Single Crystal UCu2Si2
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN(2005)
Abstract
We have succeeded in growing a high-quality single crystal of UCu2Si2 with the tetragonal structure by the Sn-flux method and measured the electrical resistivity, magnetic susceptibility, magnetization and specific heat. UCu2Si2 is found to order anti ferromagnetically below T-N = 106K, and follows a successive ferromagnetic ordering at T-C = 100 K. The magnetic properties are highly anisotropic, reflecting the crystal structure. An easy-axis of magnetization is found to be the [001] direction (c-axis) both in the antiferromagnetic and ferromagnetic phases, while the [100] direction (a-axis) corresponds to the hard-axis in magnetization. The magnetization curve in the antiferromagnetic phase indicates a clear metamagnetic transition at a low field of about 1 kOe and changes into a ferromagnetic magnetization curve below T-C = 100 K. The saturation moment is determined as 1.75 mu(B)/U at 2 K. The electronic specific heat coefficient is also determined as 20 mJ/(K(2.)mol).
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Key words
UCu2Si2,single crystal growth,flux method,Ising-type ferromagnetism
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