Characteristics Of W-Doped, (Pb0.8sr0.2)Tio3 Thin Films

Undoped, 0.5%, and 1% W-doped (Pb0.8Sr0.2) TiO3 (PST) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering. X-ray diffraction shows that the c/a ratio of PST films decreases with increasing W content. The remnant polarization and coercive field decrease with increasing W content. The W doping exhibits remarkable improvement of fatigue endurance. The degradation of polarization after 10(10) cycles is only 25% for W-doped PST films, and that of the undoped film is 75%. The dielectric properties as analyzed by the Rayleigh law reveal that pinning of the domain wall motion is decreased by W doping. (C) 2007 The Electrochemical Society.