Threshold Voltage Adjustment in Nanoscale DG FinFETs Via Limited Source/Drain Dopants in the Channel
IEEE Transactions on Electron Devices（2009）
关键词
Effective channel length,I-ON versus I-OFF,gate-source/drain (G-S/D) underlap,random doping fluctuations (RDFs),source/drain (S/D) lateral doping profile
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