Crystal growth of GaPO4, a very promising material for manufacturing baw devices

GaPO4 cystals were obtained by hydrothermal solution crystal growth. The retrograd solubility of the material was investigated in different solvents. In static growth vessels, good quality crystals can be obtained only if the solute supply is higher than about 0.06M/L. Crystal characterization by infrared spectroscopy showed that dilute solvents at high temperature decrease the “-OH” group content. Seed lengthening by splicing along the Y-axis was designed. The AT cut angle and the C44 elastic constant were determined. Compared to quartz-type materials, the C0/C1 calculation shows the high ability of GaPO4 for manufacturing BAW devices.