Effects of $\hbox{CF}_{4}$ Plasma Treatment on the Electrical Characteristics of Poly-Silicon TFTs Using a $ \hbox{Tb}_{2}\hbox{O}_{3}$ Gate Dielectric

In this paper, we developed high-k Tb2O3 poly-Si thin-film transistors (TFTs) using different CF4 plasma power treatments. The high-k Tb2O3 poly-Si TFT device with a 20-W plasma power exhibited better electrical characteristics in terms of a highly effective carrier mobility, a high-driving current, a low-threshold voltage, a small subthreshold slope, and a high ION/IOFF current ratio. This result...